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Articles

Vol. 1 No. 4 (2026)

X-Ray Topographic Characterization of Crystal Defects in High-Voltage 4H-SiC Wafers

Submitted
August 7, 2026
Published
August 7, 2026

Abstract

The rapid advancement of high-voltage power electronics has necessitated the development of semiconductor materials capable of withstanding extreme electrical and thermal conditions. Among the various wide bandgap materials, the 4H polytype of silicon carbide has emerged as the premier candidate for next-generation power devices, including those utilized in electric vehicles, renewable energy grid integration, and industrial motor drives. However, the commercial viability and operational reliability of high-voltage silicon carbide devices are fundamentally constrained by the presence of crystallographic defects inherent in the bulk material and epitaxial layers. This paper provides a comprehensive investigation into the characterization of crystal defects in high-voltage 4H-SiC wafers using X-ray topography. We systematically explore the morphological signatures of micropipes, threading screw dislocations, threading edge dislocations, basal plane dislocations, and stacking faults. Through non-destructive X-ray topographic imaging, the spatial distribution and density of these defects are analyzed in detail. The methodology encompasses both laboratory-based and synchrotron white-beam X-ray topography, highlighting the mechanisms of contrast formation based on kinematic and dynamical diffraction theories. Furthermore, the correlation between specific defect types and the degradation of high-voltage device performance is extensively discussed, providing critical insights for material scientists and process engineers aiming to optimize crystal growth and fabrication processes.

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